类型 | 描述 |
---|---|
系列: | SpiFlash® |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 64Mb (8M x 8) |
内存接口: | SPI - Quad I/O |
时钟频率: | 80 MHz |
写周期时间 - 字,页: | 50µs, 3ms |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 105°C (TA) |
安装类型: | Surface Mount |
包/箱: | 16-SOIC (0.295", 7.50mm Width) |
供应商设备包: | 16-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT27C1024-90PIRoving Networks / Microchip Technology |
IC EPROM 1MBIT PARALLEL 40DIP |
|
AT27LV256A-55TCRoving Networks / Microchip Technology |
IC EPROM 256KBIT PARALLEL 28TSOP |
|
IS42S32400E-6BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
71V30S25TF8Renesas Electronics America |
IC SRAM 8KBIT PARALLEL 64TQFP |
|
IS66WV1M16DBLL-70BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC PSRAM 16MBIT PARALLEL 48TFBGA |
|
IS43DR82560B-3DBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 60TWBGA |
|
IS42VS16100C1-10T-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PAR 50TSOP II |
|
IDT71T75602S200BG8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 119PBGA |
|
IS61NLF51218A-7.5B3IISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 9MBIT PARALLEL 165TFBGA |
|
S34MS04G100BHI003SkyHigh Memory Limited |
IC FLASH 4G PARALLEL 63BGA |
|
SST25PF040C-40V/MF18GVAORoving Networks / Microchip Technology |
IC FLASH 4MBIT SPI 40MHZ 8WDFN |
|
7027L55PFG/2909Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
MT29F2G08ABAEAWP-E:E TRMicron Technology |
IC FLASH 2GBIT PARALLEL 48TSOP I |