English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | EPROM |
| 技术: | EPROM - OTP |
| 内存大小: | 1Mb (64K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | - |
| 访问时间: | 90 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TC) |
| 安装类型: | Through Hole |
| 包/箱: | 40-DIP (0.600", 15.24mm) |
| 供应商设备包: | 40-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AT27LV256A-55TCRoving Networks / Microchip Technology |
IC EPROM 256KBIT PARALLEL 28TSOP |
|
IS42S32400E-6BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
71V30S25TF8Renesas Electronics America |
IC SRAM 8KBIT PARALLEL 64TQFP |
|
IS66WV1M16DBLL-70BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC PSRAM 16MBIT PARALLEL 48TFBGA |
|
IS43DR82560B-3DBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 60TWBGA |
|
IS42VS16100C1-10T-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PAR 50TSOP II |
|
IDT71T75602S200BG8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 119PBGA |
|
IS61NLF51218A-7.5B3IISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 9MBIT PARALLEL 165TFBGA |
|
S34MS04G100BHI003SkyHigh Memory Limited |
IC FLASH 4G PARALLEL 63BGA |
|
SST25PF040C-40V/MF18GVAORoving Networks / Microchip Technology |
IC FLASH 4MBIT SPI 40MHZ 8WDFN |
|
7027L55PFG/2909Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
MT29F2G08ABAEAWP-E:E TRMicron Technology |
IC FLASH 2GBIT PARALLEL 48TSOP I |
|
AT93C57-10PC-2.5Roving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8DIP |
