类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - Mobile LPDDR2 |
内存大小: | 2Gb (64M x 32) |
内存接口: | Parallel |
时钟频率: | 400 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | - |
电压 - 电源: | 1.14V ~ 1.95V |
工作温度: | -25°C ~ 85°C (TC) |
安装类型: | Surface Mount |
包/箱: | 134-VFBGA |
供应商设备包: | 134-VFBGA (10x11.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C1351G-100AXCCypress Semiconductor |
NO WARRANTY |
|
R1LV3216RSA-5SI#S0Renesas Electronics America |
IC SRAM 32MBIT PARALLEL 48TSOP I |
|
70V657S12DRRenesas Electronics America |
IC SRAM 1.125MBIT PAR 208PQFP |
|
24LC044T-I/STRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ 8TSSOP |
|
IS63LV1024L-12JLISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
70V9369L7PFRenesas Electronics America |
IC SRAM 288KBIT PARALLEL 100TQFP |
|
S29WS256R0SBHW000Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 84FBGA |
|
IS42S16800D-6T-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 54TSOP II |
|
W25Q40BWSNIGWinbond Electronics Corporation |
IC FLASH 4MBIT SPI 80MHZ 8SOIC |
|
R1LV0816ABG-5SI#S0Renesas Electronics America |
IC SRAM 8MBIT PARALLEL 48FBGA |
|
M25P80-VMW6TG TRMicron Technology |
IC FLASH 8MBIT SPI 75MHZ 8SO |
|
7005L20PFI8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 64TQFP |
|
W25Q80BVSNIGWinbond Electronics Corporation |
IC FLASH 8MBIT SPI 104MHZ 8SOIC |