类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 1Mb (128K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 12ns |
访问时间: | 12 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 32-BSOJ (0.300", 7.62mm Width) |
供应商设备包: | 32-SOJ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
70V9369L7PFRenesas Electronics America |
IC SRAM 288KBIT PARALLEL 100TQFP |
|
S29WS256R0SBHW000Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 84FBGA |
|
IS42S16800D-6T-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 54TSOP II |
|
W25Q40BWSNIGWinbond Electronics Corporation |
IC FLASH 4MBIT SPI 80MHZ 8SOIC |
|
R1LV0816ABG-5SI#S0Renesas Electronics America |
IC SRAM 8MBIT PARALLEL 48FBGA |
|
M25P80-VMW6TG TRMicron Technology |
IC FLASH 8MBIT SPI 75MHZ 8SO |
|
7005L20PFI8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 64TQFP |
|
W25Q80BVSNIGWinbond Electronics Corporation |
IC FLASH 8MBIT SPI 104MHZ 8SOIC |
|
S34MS04G200BHI003SkyHigh Memory Limited |
IC FLASH 4G PARALLEL 63BGA |
|
AT28HC256-12JIRoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 32PLCC |
|
M29W128GSL70ZS6F TRMicron Technology |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
IS42VM32400G-6BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
AT93C56B-SSPD-TRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 1MHZ 8SOIC |