类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | - |
内存格式: | - |
技术: | - |
内存大小: | - |
内存接口: | - |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | - |
工作温度: | - |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT25020A-10PI-2.7Roving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 20MHZ 8DIP |
|
IS61NVP51236-250B3-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
AT25HP256-10CI-2.7Roving Networks / Microchip Technology |
IC EEPROM 256KBIT SPI 10MHZ 8LAP |
|
AT25020N-10SC-2.7Roving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 3MHZ 8SOIC |
|
IDT71V016SA15PHRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
IS25LQ080B-JKLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 8MBIT SPI/QUAD 8WSON |
|
IS46TR16640B-125JBLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
|
AT34C02N-10SIRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
MT46H64M32LFMA-6 WT:BMicron Technology |
IC DRAM 2GBIT PARALLEL 168WFBGA |
|
AT24C128Y1-10YI-2.7Roving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 1MHZ 8MAP |
|
JS28F256M29EWHB TRMicron Technology |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
IS45S32800D-6TLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 86TSOP II |
|
70V5388S133BCRenesas Electronics America |
IC SRAM 1.125MBIT PAR 256CABGA |