类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 18Mb (512K x 36) |
内存接口: | Parallel |
时钟频率: | 250 MHz |
写周期时间 - 字,页: | - |
访问时间: | 2.6 ns |
电压 - 电源: | 2.375V ~ 2.625V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-TBGA |
供应商设备包: | 165-TFBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT25HP256-10CI-2.7Roving Networks / Microchip Technology |
IC EEPROM 256KBIT SPI 10MHZ 8LAP |
|
AT25020N-10SC-2.7Roving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 3MHZ 8SOIC |
|
IDT71V016SA15PHRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
IS25LQ080B-JKLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 8MBIT SPI/QUAD 8WSON |
|
IS46TR16640B-125JBLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
|
AT34C02N-10SIRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
MT46H64M32LFMA-6 WT:BMicron Technology |
IC DRAM 2GBIT PARALLEL 168WFBGA |
|
AT24C128Y1-10YI-2.7Roving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 1MHZ 8MAP |
|
JS28F256M29EWHB TRMicron Technology |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
IS45S32800D-6TLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 86TSOP II |
|
70V5388S133BCRenesas Electronics America |
IC SRAM 1.125MBIT PAR 256CABGA |
|
AT45DB081D-SSU SL383-ADAdesto Technologies |
IC FLASH 8MBIT SPI 66MHZ 8SOIC |
|
AT24C02A-10TU-2.7Roving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 8TSSOP |