类型 | 描述 |
---|---|
系列: | SpiFlash® |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH |
内存大小: | 8Mb (1M x 8) |
内存接口: | SPI |
时钟频率: | 75 MHz |
写周期时间 - 字,页: | 3ms |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 16-SOIC (0.295", 7.50mm Width) |
供应商设备包: | 16-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
93LC56CT-E/MC15KVAORoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8DFN |
|
MT48LC8M32LFB5-10 TRMicron Technology |
IC DRAM 256MBIT PARALLEL 90VFBGA |
|
S34MS01G104BHI910SkyHigh Memory Limited |
IC FLASH 1G PARALLEL 63BGA |
|
AT49F512-70PCRoving Networks / Microchip Technology |
IC FLASH 512KBIT PARALLEL 32DIP |
|
AT93C66A-10PI-1.8Roving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8DIP |
|
MB85RS128BPNF-G-JNE1Fujitsu Electronics America, Inc. |
IC FRAM 128KBIT SPI 33MHZ 8SOP |
|
MT29F4G08ABCHC-ET:C TRMicron Technology |
IC FLASH 4GBIT PARALLEL 63VFBGA |
|
IS61LF12836A-7.5B2I-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
MT29F256G08EFEBBWP:B TRMicron Technology |
IC FLASH 256GBIT PAR 48TSOP I |
|
AT25040-10PI-2.7Roving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 3MHZ 8DIP |
|
MT52L256M32D1PF-093 WT ES:B TRMicron Technology |
IC DRAM 8GBIT 1067MHZ 178FBGA |
|
X24C44SIIntersil (Renesas Electronics America) |
IC NVSRAM 256B SPI 1MHZ 8SOIC |
|
70V24L25JRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 84PLCC |