







 
                            FUSE CERAMIC 500MA 250VAC 125VDC
 
                            TRANS NPN DARL 350V 15A TO-220
 
                            SPIRAL WRAP 0.936" X 25' NATURAL
 
                            IC EEPROM 2KBIT SPI 2MHZ 8DFN
| 类型 | 描述 | 
|---|---|
| 系列: | Automotive, AEC-Q100 | 
| 包裹: | Tape & Reel (TR) | 
| 零件状态: | Active | 
| 内存类型: | Non-Volatile | 
| 内存格式: | EEPROM | 
| 技术: | EEPROM | 
| 内存大小: | 2Kb (256 x 8, 128 x 16) | 
| 内存接口: | SPI | 
| 时钟频率: | 2 MHz | 
| 写周期时间 - 字,页: | 6ms | 
| 访问时间: | - | 
| 电压 - 电源: | 2.5V ~ 5.5V | 
| 工作温度: | -40°C ~ 125°C (TA) | 
| 安装类型: | Surface Mount | 
| 包/箱: | 8-VFDFN Exposed Pad | 
| 供应商设备包: | 8-DFN (2x3) | 
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|   | MT48LC8M32LFB5-10 TRMicron Technology | IC DRAM 256MBIT PARALLEL 90VFBGA | 
|   | S34MS01G104BHI910SkyHigh Memory Limited | IC FLASH 1G PARALLEL 63BGA | 
|   | AT49F512-70PCRoving Networks / Microchip Technology | IC FLASH 512KBIT PARALLEL 32DIP | 
|   | AT93C66A-10PI-1.8Roving Networks / Microchip Technology | IC EEPROM 4KBIT SPI 2MHZ 8DIP | 
|   | MB85RS128BPNF-G-JNE1Fujitsu Electronics America, Inc. | IC FRAM 128KBIT SPI 33MHZ 8SOP | 
|   | MT29F4G08ABCHC-ET:C TRMicron Technology | IC FLASH 4GBIT PARALLEL 63VFBGA | 
|   | IS61LF12836A-7.5B2I-TRISSI (Integrated Silicon Solution, Inc.) | IC SRAM 4.5MBIT PARALLEL 119PBGA | 
|   | MT29F256G08EFEBBWP:B TRMicron Technology | IC FLASH 256GBIT PAR 48TSOP I | 
|   | AT25040-10PI-2.7Roving Networks / Microchip Technology | IC EEPROM 4KBIT SPI 3MHZ 8DIP | 
|   | MT52L256M32D1PF-093 WT ES:B TRMicron Technology | IC DRAM 8GBIT 1067MHZ 178FBGA | 
|   | X24C44SIIntersil (Renesas Electronics America) | IC NVSRAM 256B SPI 1MHZ 8SOIC | 
|   | 70V24L25JRenesas Electronics America | IC SRAM 64KBIT PARALLEL 84PLCC | 
|   | 71421SA25PF8Renesas Electronics America | IC SRAM 16KBIT PARALLEL 64TQFP |