类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | - |
漏源电压 (vdss): | 650 V |
电流 - 连续漏极 (id) @ 25°c: | 31A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 12V |
rds on (max) @ id, vgs: | 111mOhm @ 20A, 12V |
vgs(th) (最大值) @ id: | 6V @ 10mA |
栅极电荷 (qg) (max) @ vgs: | 51 nC @ 15 V |
vgs (最大值): | ±25V |
输入电容 (ciss) (max) @ vds: | 1500 pF @ 100 V |
场效应管特征: | - |
功耗(最大值): | 190W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-247-3 |
包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SQJ446EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 40V 60A PPAK SO-8 |
|
NTMFS4C06NAT1GRochester Electronics |
MOSFET N-CH 30V 11A SO8FL |
|
RJK0358DSP-WS#J0Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
UPA2792GR(0)-E1-AZRochester Electronics |
SWITCHING N AND P TRANSISTORS |
|
NTD6N40T4Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
PMDXB550UNE/S500147Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
RFM25N06Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IXTH58N25L2Wickmann / Littelfuse |
MOSFET N-CH 250V 58A TO247 |
|
PCFQ5P10WSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 100V DIE |
|
NDCTR10120ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 1200V 10A SMD |
|
2SK974STL-ERochester Electronics |
GENERAL SWITCHING POWER MOSFET |
|
MSC360SMA120SRoving Networks / Microchip Technology |
MOSFET SIC 1200 V 360 MOHM TO-26 |
|
2SJ387STL-ERochester Electronics |
P-CHANNEL POWER MOSFET |