类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
RFM25N06Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IXTH58N25L2Wickmann / Littelfuse |
MOSFET N-CH 250V 58A TO247 |
|
PCFQ5P10WSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 100V DIE |
|
NDCTR10120ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 1200V 10A SMD |
|
2SK974STL-ERochester Electronics |
GENERAL SWITCHING POWER MOSFET |
|
MSC360SMA120SRoving Networks / Microchip Technology |
MOSFET SIC 1200 V 360 MOHM TO-26 |
|
2SJ387STL-ERochester Electronics |
P-CHANNEL POWER MOSFET |
|
SPB160N04S2-03Rochester Electronics |
160A, 40V N-CHANNEL, MOSFET |
|
RTQ025P02HZGTRROHM Semiconductor |
MOSFET P-CH 20V 2.5A TSMT6 |
|
UPA2450CTL(1)-E1-ARochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
2SK1772HYTR-ERochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
IXTQ32P20TWickmann / Littelfuse |
MOSFET P-CH 200V 32A TO3P |
|
PHM10030DLS115Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |