English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MXSMIO™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 256Mb (32M x 8) |
| 内存接口: | SPI - Quad I/O |
| 时钟频率: | 133 MHz |
| 写周期时间 - 字，页: | 4ms |
| 访问时间: | - |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 105°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 16-SOIC (0.295", 7.50mm Width) |
| 供应商设备包: | 16-SOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT29F2T08CTCCBJ7-6R:CMicron Technology |
IC FLASH 2TB PARALLEL 152LBGA |
|
|
MT53B256M32D1NP-053 WT:C TRMicron Technology |
IC DRAM 8GBIT 1866MHZ 200WFBGA |
|
|
S99GL128P0070Cypress Semiconductor |
IC FLASH |
|
|
MT29F1G01ABBFDSF-IT:FMicron Technology |
IC FLASH 1GBIT SPI 16SO |
|
|
MT40A4G4HPR-075H:GMicron Technology |
IC DRAM 16GBIT PARALLEL 1.333GHZ |
|
|
EDFP112A3PB-JDTJ-F-DMicron Technology |
IC DRAM 24GBIT PARALLEL 933MHZ |
|
|
7132LA70JI/2703Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |
|
|
W972GG8JB-3Winbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 60WBGA |
|
|
MT47H256M8THN-25E:HMicron Technology |
IC DRAM 2GBIT PARALLEL 63FBGA |
|
|
S99JL032J70TFI420Cypress Semiconductor |
IC FLASH MEMORY NOR |
|
|
7006S35J8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 68PLCC |
|
|
S99-50362Cypress Semiconductor |
IC MEMORY 1GB FLASH 3.0V 56TSOP |
|
|
CG8230AATCypress Semiconductor |
IC SRAM MICROPOWER |
