类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NAND |
内存大小: | 1Gb (1G x 1) |
内存接口: | SPI |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.7V ~ 1.95V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 16-SOIC (0.295", 7.50mm Width) |
供应商设备包: | 16-SO |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT40A4G4HPR-075H:GMicron Technology |
IC DRAM 16GBIT PARALLEL 1.333GHZ |
|
EDFP112A3PB-JDTJ-F-DMicron Technology |
IC DRAM 24GBIT PARALLEL 933MHZ |
|
7132LA70JI/2703Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |
|
W972GG8JB-3Winbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 60WBGA |
|
MT47H256M8THN-25E:HMicron Technology |
IC DRAM 2GBIT PARALLEL 63FBGA |
|
S99JL032J70TFI420Cypress Semiconductor |
IC FLASH MEMORY NOR |
|
7006S35J8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 68PLCC |
|
S99-50362Cypress Semiconductor |
IC MEMORY 1GB FLASH 3.0V 56TSOP |
|
CG8230AATCypress Semiconductor |
IC SRAM MICROPOWER |
|
7026L55JI/2703Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 84PLCC |
|
24AA64-I/WF16KRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 400KHZ DIE |
|
7016S15JRenesas Electronics America |
IC SRAM 144K PARALLEL 68PLCC |
|
315-0827-000 001Cypress Semiconductor |
IC GATE NOR |