类型 | 描述 |
---|---|
系列: | 30KPA |
包裹: | Bulk |
零件状态: | Active |
类型: | Zener |
单向通道: | 1 |
双向通道: | - |
电压 - 反向间隔(典型值): | 280V |
电压 - 击穿(分钟): | 312.8V |
电压 - 钳位(最大值)@ ipp: | 464V |
电流 - 峰值脉冲 (10/1000µs): | 65.3A |
功率-峰值脉冲: | 30000W (30kW) |
电源线保护: | No |
应用: | General Purpose |
电容@频率: | - |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
包/箱: | P600, Axial |
供应商设备包: | P600 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
P6SMB11Wickmann / Littelfuse |
TVS DIODE 9.4V 16.38V DO214AA |
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SM6S24AHE3_A/IVishay General Semiconductor – Diodes Division |
TVS DIODE 24V 38.9V DO218AB |
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MSMCJ9.0ARoving Networks / Microchip Technology |
TVS DIODE 9V 15.4V DO214AB |
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SMB10J18AHE3/52Vishay General Semiconductor – Diodes Division |
TVS DIODE 18V 29.2V DO214AA |
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P4SMA36A-E3/5AVishay General Semiconductor – Diodes Division |
TVS DIODE 30.8V 49.9V DO214AC |
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ESD8024MNTAGRochester Electronics |
TRANS VOLTAGE SUPPRESSOR DIODE |
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JAN1N6471Roving Networks / Microchip Technology |
TVS DIODE 12V 22.6V AXIAL |
|
P6SMB150CWickmann / Littelfuse |
TVS DIODE 128V 217.35V DO214AA |
|
JANTX1N6117AUSRoving Networks / Microchip Technology |
TVS DIODE 22.8V 41.6V B SQ-MELF |
|
SM4T56CAYSTMicroelectronics |
TVS DIODE 48V 100V SMA |
|
TGL41-16A-E3/97Vishay General Semiconductor – Diodes Division |
TVS DIODE 13.6V 22.5V DO213AB |
|
SMDJ120A-HRWickmann / Littelfuse |
TVS DIODE 120V 193V DO214AB |
|
SMCJ10A R7GTSC (Taiwan Semiconductor) |
TVS DIODE 10V 17V DO214AB |