English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | 30KPA |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 132V |
| 电压 - 击穿（分钟）: | 147.4V |
| 电压 - 钳位（最大值）@ ipp: | 213V |
| 电流 - 峰值脉冲 (10/1000µs): | 142.3A |
| 功率-峰值脉冲: | 30000W (30kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | P600, Axial |
| 供应商设备包: | P600 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SMBJE100APowerStor (Eaton) |
TVS DIODE 100V 162VC 600W SMBJ |
|
MASMCJ16AE3Roving Networks / Microchip Technology |
TVS DIODE 16V 26V DO214AB |
|
1.5SMCJ13CA-AQDiotec Semiconductor |
TVS SMC 13V 1500W BI |
|
MSMBJ7.0CARoving Networks / Microchip Technology |
TVS DIODE 7V 12V DO214AA |
|
MXSMBJ12ARoving Networks / Microchip Technology |
TVS DIODE 12V 19.9V DO214AA |
|
SMAJ51CA-M3/61Vishay General Semiconductor – Diodes Division |
TVS DIODE 51V 82.4V DO214AC |
|
MXLP4KE10AE3Roving Networks / Microchip Technology |
TVS DIODE 8.55V 14.5V DO204AL |
|
SMCJ110A-E3/57TVishay General Semiconductor – Diodes Division |
TVS DIODE 110V 177V DO214AB |
|
UPT24/TR7Roving Networks / Microchip Technology |
TVS DIODE 24V 43.2V POWERMITE 1 |
|
SMBJE26CAPowerStor (Eaton) |
TVS DIODE 26V 42.1VC 600W SMBJ |
|
SMF51A-TPMicro Commercial Components (MCC) |
TVS DIODE 51V 82.4V SOD123FL |
|
SMCJ22CA-M3/9ATVishay General Semiconductor – Diodes Division |
TVS DIODE 22V 35.5V DO214AB |
|
MXL5KP13CARoving Networks / Microchip Technology |
TVS DIODE 13V 21.5V CASE 5A |
