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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 130V |
| 电压 - 击穿（分钟）: | 144V |
| 电压 - 钳位（最大值）@ ipp: | 209V |
| 电流 - 峰值脉冲 (10/1000µs): | 2.9A |
| 功率-峰值脉冲: | 600W |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | DO-214AA, SMB |
| 供应商设备包: | SMBJ (DO-214AA) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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SM6T33CA-M3/5BVishay General Semiconductor – Diodes Division |
TVS DIODE 28.2V 45.7V DO214AA |
|
SMAJ8.5CA-E3/61Vishay General Semiconductor – Diodes Division |
TVS DIODE 8.5V 14.4V DO214AC |
|
MXLSMLJ100CAE3Roving Networks / Microchip Technology |
TVS DIODE 100V 162V DO214AB |
|
MXSMBJ13AE3Roving Networks / Microchip Technology |
TVS DIODE 13V 21.5V DO214AA |
|
MXSMLJ9.0AE3Roving Networks / Microchip Technology |
TVS DIODE 9V 15.4V DO214AB |
|
SMBJ90E3/TR13Roving Networks / Microchip Technology |
TVS DIODE 90V 160V DO214AA |
|
MART100KP58AE3Roving Networks / Microchip Technology |
TVS DIODE 58V 114V CASE 5A |
|
1.5KE15CA-E3/51Vishay General Semiconductor – Diodes Division |
TVS DIODE 12.8V 21.2V 1.5KE |
|
ESDA12-1KSTMicroelectronics |
TVS DIODE 10V 28V SOD523 |
|
BZW04-44B-E3/54Vishay General Semiconductor – Diodes Division |
TVS DIODE 43.6V 70.1V DO204AL |
|
SMCJ20A-13-FZetex Semiconductors (Diodes Inc.) |
TVS DIODE 20V 32.4V SMC |
|
MASMBJ6.0ARoving Networks / Microchip Technology |
TVS DIODE 6V 10.3V DO214AA |
|
SMBJ15AHE3_A/IVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AA |
