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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 110V |
| 电压 - 击穿（分钟）: | 122V |
| 电压 - 钳位（最大值）@ ipp: | 177V |
| 电流 - 峰值脉冲 (10/1000µs): | 3.4A |
| 功率-峰值脉冲: | 600W |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | DO-215AA, SMB Gull Wing |
| 供应商设备包: | SMBG (DO-215AA) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
P4SMA350AHM3_B/IVishay General Semiconductor – Diodes Division |
TVS DIODE 400W 350V DO214AC |
|
MMBZ5V6ALT3GSanyo Semiconductor/ON Semiconductor |
TVS DIODE 3V 8V SOT23-3 |
|
1.5KE13CA R0GTSC (Taiwan Semiconductor) |
TVS DIODE 11.1V 18.2V DO201 |
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30KPA132A-HRAWickmann / Littelfuse |
TVS DIODE 132V 213V P600 |
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SMA5J12A-E3/61Vishay General Semiconductor – Diodes Division |
TVS DIODE 12V 19.9V DO214AC |
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SMCJ160A M6GTSC (Taiwan Semiconductor) |
TVS DIODE 160V 259V DO214AB |
|
P4SMA200AHR3GTSC (Taiwan Semiconductor) |
TVS DIODE 171V 274V DO214AC |
|
MASMBG54ARoving Networks / Microchip Technology |
TVS DIODE 54V 87.1V DO215AA |
|
MASMBJ9.0CARoving Networks / Microchip Technology |
TVS DIODE 9V 15.4V DO214AA |
|
SMCJ70CA-E3/57TVishay General Semiconductor – Diodes Division |
TVS DIODE 70V 113V DO214AB |
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SMCJ58A-E3/9ATVishay General Semiconductor – Diodes Division |
TVS DIODE 58V 93.6V DO214AB |
|
MXP4KE43AE3Roving Networks / Microchip Technology |
TVS DIODE 36.8V 59.3V DO204AL |
|
MXSMBG120CAE3Roving Networks / Microchip Technology |
TVS DIODE 120V 193V DO215AA |
