English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 20V |
| 电压 - 击穿（分钟）: | 22.2V |
| 电压 - 钳位（最大值）@ ipp: | 32.4V |
| 电流 - 峰值脉冲 (10/1000µs): | 18.5A |
| 功率-峰值脉冲: | 600W |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | DO-214AA, SMB |
| 供应商设备包: | SMBJ (DO-214AA) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CDNBS08-T03J.W. Miller / Bourns |
TVS DIODE 3V 10.9V 8SOIC |
|
SMDJ16A V6GTSC (Taiwan Semiconductor) |
TVS DIODE 16V 26V DO214AB |
|
SA14CAHR0GTSC (Taiwan Semiconductor) |
TVS DIODE 14V 23.2V DO204AC |
|
P6SMB27AHM3_A/HVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AA |
|
PESD5V0V2BMYLNexperia |
TVS DIODE 5V 12.5V DFN1006-3 |
|
SMCJ90CA-E3/9ATVishay General Semiconductor – Diodes Division |
TVS DIODE 90V 146V DO214AB |
|
MAP4KE8.2CAE3Roving Networks / Microchip Technology |
TVS DIODE 7.02V 12.1V DO204AL |
|
ICTE10HE3_A/CVishay General Semiconductor – Diodes Division |
TVS DIODE 10V 14.1V 1.5KE |
|
SZESD8451MUT5GSanyo Semiconductor/ON Semiconductor |
TVS DIODE 3.3V 19V 2X3DFN |
|
SMCG43CA-E3/9ATVishay General Semiconductor – Diodes Division |
TVS DIODE 43V 69.4V DO215AB |
|
SMA5J22A-E3/5AVishay General Semiconductor – Diodes Division |
TVS DIODE 22V 35.5V DO214AC |
|
MA5KP7.0ARoving Networks / Microchip Technology |
TVS DIODE 7V 12V DO204AR |
|
BZT03D11-TAPVishay General Semiconductor – Diodes Division |
TVS DIODE 8.6V 16.2V SOD57 |
