English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | 30KPA-HRA |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 33V |
| 电压 - 击穿（分钟）: | 36.9V |
| 电压 - 钳位（最大值）@ ipp: | 58.5V |
| 电流 - 峰值脉冲 (10/1000µs): | 517.9A |
| 功率-峰值脉冲: | 30000W (30kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -55°C ~ 175°C (TA) |
| 安装类型: | Through Hole |
| 包/箱: | P600, Axial |
| 供应商设备包: | P600 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SMAJ58A R3GTSC (Taiwan Semiconductor) |
TVS DIODE 58V 93.6V DO214AC |
|
SMB6F36ASTMicroelectronics |
600 W, 36 V TVS IN SMB FLAT |
|
MXLSMBJ11CARoving Networks / Microchip Technology |
TVS DIODE 11V 18.2V DO214AA |
|
TPSMB300CA-AWickmann / Littelfuse |
TVS DIODE 256V 414V DO214AA |
|
MSMCJ90CAE3Roving Networks / Microchip Technology |
TVS DIODE 90V 146V DO214AB |
|
TGL41-18A-E3/97Vishay General Semiconductor – Diodes Division |
TVS DIODE 15.3V 25.2V DO213AB |
|
TPSMB8.2AHE3_A/IVishay General Semiconductor – Diodes Division |
TVS DIODE 7.02V 12.1V DO214AA |
|
A5KP58A-GComchip Technology |
TVS DIODE 58V 93.6V R-6 |
|
SM15T6V8CA-M3/9ATVishay General Semiconductor – Diodes Division |
TVS DIODE 5.8V 10.5V DO214AB |
|
SMPC8.0A-M3/87AVishay General Semiconductor – Diodes Division |
TVS DIODE 8V 13.6V TO277A |
|
TV30C780JB-GComchip Technology |
TVS DIODE 78V 126V DO214AB |
|
MA5KP58CARoving Networks / Microchip Technology |
TVS DIODE 58V 93.6V DO204AR |
|
ATV06B301JB-HFComchip Technology |
TVS DIODE 300V 486V DO214AA |
