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| 类型 | 描述 |
|---|---|
| 系列: | SMCJE |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 160V |
| 电压 - 击穿（分钟）: | 178V |
| 电压 - 钳位（最大值）@ ipp: | 259V |
| 电流 - 峰值脉冲 (10/1000µs): | 5.8A |
| 功率-峰值脉冲: | 1500W (1.5kW) |
| 电源线保护: | No |
| 应用: | Telecom |
| 电容@频率: | - |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | DO-214AB, SMC |
| 供应商设备包: | SMC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
P4SMA62A-E3/5AVishay General Semiconductor – Diodes Division |
TVS DIODE 53V 85V DO214AC |
|
MAP4KE120CAE3Roving Networks / Microchip Technology |
TVS DIODE 102V 165V DO204AL |
|
P6KE440A A0GTSC (Taiwan Semiconductor) |
TVS DIODE 376V 602V DO204AC |
|
1.5KE68A-TPMicro Commercial Components (MCC) |
TVS DIODE 58.1V 92V DO201AE |
|
VTVS23GSMF-HM3-08Vishay General Semiconductor – Diodes Division |
TVS DIODE 22.6V 38V DO219AB |
|
JANTXV1N6107AUSRoving Networks / Microchip Technology |
TVS DIODE 8.4V 15.6V B SQ-MELF |
|
1SMB64CAT3GRochester Electronics |
TVS, 600W, 64V, BIDIRECTIONAL |
|
MSMLG120CAE3Roving Networks / Microchip Technology |
TVS DIODE 120V 193V DO215AB |
|
SMCG6.5AHE3/9ATVishay General Semiconductor – Diodes Division |
TVS DIODE 6.5V 11.2V DO215AB |
|
P4KE9.1A-E3/73Vishay General Semiconductor – Diodes Division |
TVS DIODE 7.78V 13.4V DO204AL |
|
SMAJ24CA-QHJ.W. Miller / Bourns |
TVS DIODE 24V 38.9V SMA |
|
PESD5V0L1ULD,315Nexperia |
TVS DIODE 5V 12V DFN1006D-2 |
|
MXSMCJ40AE3Roving Networks / Microchip Technology |
TVS DIODE 40V 64.5V DO214AB |
