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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 70V |
| 电压 - 击穿（分钟）: | 77.8V |
| 电压 - 钳位（最大值）@ ipp: | 113V |
| 电流 - 峰值脉冲 (10/1000µs): | 13.3A |
| 功率-峰值脉冲: | 1500W (1.5kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | 90pF @ 1MHz |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | DO-214AB, SMC |
| 供应商设备包: | DO-214AB (SMCJ) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
VESD33C1-02VHG3-08Vishay General Semiconductor – Diodes Division |
ESD PROTECTION DIODE SOD-523 |
|
P6KE62A-TZetex Semiconductors (Diodes Inc.) |
TVS DIODE 53V 85V DO15 |
|
RCLAMP3304N.TCTSemtech |
TVS DIODE 3.3V 18V SLP2626P10 |
|
P4KE22A-E3/54Vishay General Semiconductor – Diodes Division |
TVS DIODE 18.8V 30.6V DO204AL |
|
SMBJ58AE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 58V 93.6V DO214AA |
|
JANTX1N6103USRoving Networks / Microchip Technology |
TVS DIODE 5.7V 11.76V B SQ-MELF |
|
MX15KP110AE3Roving Networks / Microchip Technology |
TVS DIODE 110V 178V CASE 5A |
|
1N6283A-E3/73Vishay General Semiconductor – Diodes Division |
TVS DIODE 28.2V 45.7V 1.5KE |
|
MXL5KP51CARoving Networks / Microchip Technology |
TVS DIODE 51V 82.4V CASE 5A |
|
ATV15C750JB-HFComchip Technology |
TVS DIODE 75V 121V DO214AB |
|
SMLJ48CA-TPMicro Commercial Components (MCC) |
TVS DIODE 48V 77.4V DO214AB |
|
1KSMB36CA R5GTSC (Taiwan Semiconductor) |
TVS DIODE 30.8V 49.9V DO214AA |
|
1.5KE36AHR0GTSC (Taiwan Semiconductor) |
TVS DIODE 30.8V 49.9V DO201 |
