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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 48V |
| 电压 - 击穿（分钟）: | 53.3V |
| 电压 - 钳位（最大值）@ ipp: | 94.3V |
| 电流 - 峰值脉冲 (10/1000µs): | - |
| 功率-峰值脉冲: | 100000W (100kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | DO-204AR, Axial |
| 供应商设备包: | Case 5A (DO-204AR) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
PESD5V0S1UL,315Nexperia |
TVS DIODE 5V 20V DFN1006-2 |
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1.5KE56ASTMicroelectronics |
TVS DIODE 47.8V 100V DO201 |
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LCE14AWickmann / Littelfuse |
TVS DIODE 14V 23.2V DO201 |
|
SMBJ5.0A-QJ.W. Miller / Bourns |
TVS DIODE AECQ |
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SMB8J33CA-M3/5BVishay General Semiconductor – Diodes Division |
TVS DIODE 33V 53.3V DO214AA |
|
SM6T24AHE3_A/HVishay General Semiconductor – Diodes Division |
TVS DIODE 600W DO214AA |
|
SMDA03C/TR13Roving Networks / Microchip Technology |
TVS DIODE 3.3V 9V 8SO |
|
5KASMC26AHM3_A/IVishay General Semiconductor – Diodes Division |
TVS DIODE 26V 42.1V DO214AB |
|
SMBJ440AE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 440V DO214AA |
|
P4SMA9.1CA R3GTSC (Taiwan Semiconductor) |
TVS DIODE 7.78V 13.4V DO214AC |
|
MXSMCJ100ARoving Networks / Microchip Technology |
TVS DIODE 100V 162V DO214AB |
|
SMB15F13ASTMicroelectronics |
1500 W, 13 V TVS IN SMB FLAT |
|
P4KE180CAHE3/54Vishay General Semiconductor – Diodes Division |
TVS DIODE 154V 246V DO204AL |
