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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 51V |
| 电压 - 击穿（分钟）: | 56.7V |
| 电压 - 钳位（最大值）@ ipp: | 82.4V |
| 电流 - 峰值脉冲 (10/1000µs): | 18.2A |
| 功率-峰值脉冲: | 1500W (1.5kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | DO-214AB, SMC |
| 供应商设备包: | DO-214AB (SMCJ) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SZP6SMB56CAT3GWickmann / Littelfuse |
TVS DIODE 47.8V 77V SMB |
|
MSMLG120ARoving Networks / Microchip Technology |
TVS DIODE 120V 193V DO215AB |
|
TGL34-51Diotec Semiconductor |
TVS DO-213AA 41.3V 150W UNI |
|
1.5KE160AHE3_A/CVishay General Semiconductor – Diodes Division |
TVS DIODE 136V 219V 1.5KE |
|
MXSMBJ170CAE3Roving Networks / Microchip Technology |
TVS DIODE 170V 275V DO214AA |
|
P6SMB100CA-QJ.W. Miller / Bourns |
TVS DIODE AECQ |
|
SMBG20A-M3/5BVishay General Semiconductor – Diodes Division |
TVS DIODE 20V 32.4V DO215AA |
|
MSMCJ51AE3Roving Networks / Microchip Technology |
TVS DIODE 51V 82.4V DO214AB |
|
5.0SMDJ14CAJ.W. Miller / Bourns |
TVS DIODE 14V 23.2V DO214AB |
|
SMA5J6.5A-E3/61Vishay General Semiconductor – Diodes Division |
TVS DIODE 6.5V 11.2V DO214AC |
|
SM6T12CASTMicroelectronics |
TVS DIODE 10.2V 21.7V SMB |
|
30KPA28CA-HRAWickmann / Littelfuse |
TVS DIODE 28V 50V P600 |
|
SA8.5CA B0GTSC (Taiwan Semiconductor) |
TVS DIODE 8.5V 14.4V DO204AC |
