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| 类型 | 描述 |
|---|---|
| 系列: | TransZorb® |
| 包裹: | Tape & Box (TB) |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 30.8V |
| 电压 - 击穿（分钟）: | 34.2V |
| 电压 - 钳位（最大值）@ ipp: | 49.9V |
| 电流 - 峰值脉冲 (10/1000µs): | 30.1A |
| 功率-峰值脉冲: | 1500W (1.5kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | DO-201AA, DO-27, Axial |
| 供应商设备包: | 1.5KE |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MASMBJ40CAE3Roving Networks / Microchip Technology |
TVS DIODE 40V 64.5V DO214AA |
|
SMCJ16AHE3/57TVishay General Semiconductor – Diodes Division |
TVS DIODE 16V 26V DO214AB |
|
SMLJ51CA-QJ.W. Miller / Bourns |
TVS DIODE 51V 82.4V SMC |
|
SMCG78A-E3/9ATVishay General Semiconductor – Diodes Division |
TVS DIODE 78V 126V DO215AB |
|
SMBJ70D-M3/IVishay General Semiconductor – Diodes Division |
TVS DIODE 70V 111V DO214AA |
|
MSMBG11CARoving Networks / Microchip Technology |
TVS DIODE 11V 18.2V DO215AA |
|
MXLSMCJLCE36ARoving Networks / Microchip Technology |
TVS DIODE 36V 58.1V DO214AB |
|
P4SMA18A-M3/5AVishay General Semiconductor – Diodes Division |
TVS DIODE 15.3V 25.2V DO214AC |
|
5.0SMDJ15A-T7Wickmann / Littelfuse |
TVS DIODE 15V 24.4V DO214AB |
|
SZMG2040MUTAGSanyo Semiconductor/ON Semiconductor |
TVS DIODE 5V 10V 18UDFN |
|
MXSMBJ51ARoving Networks / Microchip Technology |
TVS DIODE 51V 82.4V DO214AA |
|
SMCJ110AE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 110V 177V DO214AB |
|
SMBJ13CA-E3/52Vishay General Semiconductor – Diodes Division |
TVS DIODE 13V 21.5V DO214AA |
