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| 类型 | 描述 |
|---|---|
| 系列: | 1.5KE |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 214V |
| 电压 - 击穿（分钟）: | 237V |
| 电压 - 钳位（最大值）@ ipp: | 344V |
| 电流 - 峰值脉冲 (10/1000µs): | 4.4A |
| 功率-峰值脉冲: | 1500W (1.5kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | DO-201AA, DO-27, Axial |
| 供应商设备包: | DO-201 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MAP4KE33CAE3Roving Networks / Microchip Technology |
TVS DIODE 28.2V 45.7V DO204AL |
|
SMBG13CA-E3/52Vishay General Semiconductor – Diodes Division |
TVS DIODE 13V 21.5V DO215AA |
|
MPLAD15KP8.5AE3Roving Networks / Microchip Technology |
TVS DIODE 8.5V 14.4V PLAD |
|
SMBJ14CA-E3/5BVishay General Semiconductor – Diodes Division |
TVS DIODE 14V 23.2V DO214AA |
|
P6SMB540AHE3_AIHVishay General Semiconductor – Diodes Division |
TVS DIODE 459V 740V DO214AA |
|
MASMCJ90CAE3Roving Networks / Microchip Technology |
TVS DIODE 90V 146V DO214AB |
|
1.5SMC20A-M3/57TVishay General Semiconductor – Diodes Division |
TVS DIODE 17.1V 27.7V DO214AB |
|
P6KE400ASTMicroelectronics |
TVS DIODE 342V 706V DO15 |
|
P4SMA150AHR3GTSC (Taiwan Semiconductor) |
TVS DIODE 128V 207V DO214AC |
|
1.5KE100CA A0GTSC (Taiwan Semiconductor) |
TVS DIODE 85.5V 137V DO201 |
|
MAP4KE6.8CARoving Networks / Microchip Technology |
TVS DIODE 5.8V 10.5V DO204AL |
|
MSMCG64AE3Roving Networks / Microchip Technology |
TVS DIODE 64V 103V DO215AB |
|
SMBJ70AHE3_A/IVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AA |
