English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 45V |
| 电压 - 击穿（分钟）: | 50V |
| 电压 - 钳位（最大值）@ ipp: | 72.7V |
| 电流 - 峰值脉冲 (10/1000µs): | 69A |
| 功率-峰值脉冲: | 5000W (5kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | DO-204AR, Axial |
| 供应商设备包: | Case 5A (DO-204AR) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NUP3105LT1GSanyo Semiconductor/ON Semiconductor |
TVS DIODE 32V 66V SOT23-3 |
|
MSMBJ36CARoving Networks / Microchip Technology |
TVS DIODE 36V 58.1V DO214AA |
|
SMBJ160CAE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 160V 259V DO214AA |
|
GSOT04-G3-08Vishay General Semiconductor – Diodes Division |
TVS DIODE 4V 14.3V SOT23 |
|
MXLSMBG6.0ARoving Networks / Microchip Technology |
TVS DIODE 6V 10.3V DO215AA |
|
MASMBG11CAE3Roving Networks / Microchip Technology |
TVS DIODE 11V 18.2V DO215AA |
|
5KP210AWickmann / Littelfuse |
TVS DIODE 210V 349.5V P600 |
|
SMCJ6.0CA-E3/9ATVishay General Semiconductor – Diodes Division |
TVS DIODE 6V 10.3V DO214AB |
|
TMPG06-20AHE3_A/DVishay General Semiconductor – Diodes Division |
TVS DIODE 17V 27.7V MPG06 |
|
MXSMBG110AE3Roving Networks / Microchip Technology |
TVS DIODE 110V 177V DO215AA |
|
P6KE20ARLRochester Electronics |
TRANS VOLTAGE SUPPRESSOR DIODE |
|
SMBJ75D-M3/IVishay General Semiconductor – Diodes Division |
TVS DIODE 75V 119V DO214AA |
|
BZT03C22-TRVishay General Semiconductor – Diodes Division |
TVS DIODE 18V 31V SOD57 |
