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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 24V |
| 电压 - 击穿（分钟）: | 26.7V |
| 电压 - 钳位（最大值）@ ipp: | 38.9V |
| 电流 - 峰值脉冲 (10/1000µs): | 15.4A |
| 功率-峰值脉冲: | 600W |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | DO-214AA, SMB |
| 供应商设备包: | SMBJ (DO-214AA) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
P4KE13CAHR0GTSC (Taiwan Semiconductor) |
TVS DIODE 11.1V 18.2V DO204AL |
|
DM6W10AQ-13Zetex Semiconductors (Diodes Inc.) |
TRANSIENT VOLTAGE SUPPRESSOR DO- |
|
SMCJ8.5CA-M3/9ATVishay General Semiconductor – Diodes Division |
TVS DIODE 8.5V 14.4V DO214AB |
|
SZMMBZ27VALT3GSanyo Semiconductor/ON Semiconductor |
TVS DIODE 22V 40V SOT23-3 |
|
TPSMA18AHM3_B/IVishay General Semiconductor – Diodes Division |
400W 18V 5% SMA PAR |
|
MASMCJ11AE3Roving Networks / Microchip Technology |
TVS DIODE 11V 18.2V DO214AB |
|
SMBJ220CAE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 220V DO214AA |
|
ICTE12C-E3/54Vishay General Semiconductor – Diodes Division |
TVS DIODE 12V 17.1V 1.5KE |
|
SMAJ530HM3_B/IVishay General Semiconductor – Diodes Division |
TVS DIODE 300W 530V DO-214AC |
|
P6SMB22CA-QJ.W. Miller / Bourns |
TVS DIODE |
|
MSMLJ85CARoving Networks / Microchip Technology |
TVS DIODE 85V 137V DO214AB |
|
TGL34-24ADiotec Semiconductor |
TVS DO-213AA 20.5V 150W UNI |
|
SMA6F11ASTMicroelectronics |
600 W TVS IN SMA FLAT |
