English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | SA |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 45V |
| 电压 - 击穿（分钟）: | 50V |
| 电压 - 钳位（最大值）@ ipp: | 72.7V |
| 电流 - 峰值脉冲 (10/1000µs): | 7.2A |
| 功率-峰值脉冲: | 500W |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | DO-204AC, DO-15, Axial |
| 供应商设备包: | DO-204AC (DO-15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
P4KE7.5ATRSMC Diode Solutions |
TVS DIODE 6.05V 11.3V DO41 |
|
MSMCJ85CAE3Roving Networks / Microchip Technology |
TVS DIODE 85V 137V DO214AB |
|
SMCJ180CAE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 180V DO214AB |
|
GL24T-G3-18Vishay General Semiconductor – Diodes Division |
TVS DIODE 24V 55V SOT23 |
|
MX15KP33AE3Roving Networks / Microchip Technology |
TVS DIODE 33V 54.8V CASE 5A |
|
GSOT08-HG3-08Vishay General Semiconductor – Diodes Division |
TVS DIODE 8V 19.2V SOT23 |
|
MSMLJ5.0AE3Roving Networks / Microchip Technology |
TVS DIODE 5V 9.2V DO214AB |
|
P6SMB120AHM3_A/IVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AA |
|
MASMCJLCE16ARoving Networks / Microchip Technology |
TVS DIODE 16V 26V DO214AB |
|
ESDA17-5SC6STMicroelectronics |
TVS DIODE 14V SOT23-6 |
|
15BJ12APowerStor (Eaton) |
TVS DIODE 12V 1.5KW DO214AA |
|
TMPG06-24AHE3_A/DVishay General Semiconductor – Diodes Division |
TVS DIODE 20.5V 33.2V MPG06 |
|
MSMBJ13CARoving Networks / Microchip Technology |
TVS DIODE 13V 21.5V DO214AA |
