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| 类型 | 描述 |
|---|---|
| 系列: | 15KPA |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 22V |
| 电压 - 击穿（分钟）: | 24.57V |
| 电压 - 钳位（最大值）@ ipp: | 37.1V |
| 电流 - 峰值脉冲 (10/1000µs): | 407A |
| 功率-峰值脉冲: | 15000W (15kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | P600, Axial |
| 供应商设备包: | P600 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
P4SMA7.5CAHR3GTSC (Taiwan Semiconductor) |
TVS DIODE 6.4V 11.3V DO214AC |
|
BZW04-8V5-E3/73Vishay General Semiconductor – Diodes Division |
TVS DIODE 8.55V 14.5V DO204AL |
|
SMCJ24A V6GTSC (Taiwan Semiconductor) |
TVS DIODE 24V 38.9V DO214AB |
|
SMCJ9.0AHR7GTSC (Taiwan Semiconductor) |
TVS DIODE 9V 15.4V DO214AB |
|
MXSMBJ130CAE3Roving Networks / Microchip Technology |
TVS DIODE 130V 209V DO214AA |
|
SMB10J28A-E3/52Vishay General Semiconductor – Diodes Division |
TVS DIODE 28V 45.4V DO214AA |
|
SMF51A-HM3-08Vishay General Semiconductor – Diodes Division |
TVS DIODE 51V 82.4V DO219AB |
|
SMC3K36CAHM3/9AVishay General Semiconductor – Diodes Division |
TVS DIODE 36V 58.1V DO214AB |
|
SM30T33AYSTMicroelectronics |
TVS DIODE 28V 45.4V SMC |
|
MA1.5KE160CAE3Roving Networks / Microchip Technology |
TVS DIODE 136V 219V DO204AR |
|
ICTE18HE3_A/CVishay General Semiconductor – Diodes Division |
TVS DIODE 18V 25.2V 1.5KE |
|
SA18ARochester Electronics |
TRANS VOLTAGE SUPPRESSOR DIODE |
|
MSMLG110CARoving Networks / Microchip Technology |
TVS DIODE 110V 177V DO215AB |
