English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 10V |
| 电压 - 击穿（分钟）: | 11V |
| 电压 - 钳位（最大值）@ ipp: | 18V |
| 电流 - 峰值脉冲 (10/1000µs): | 8.33A |
| 功率-峰值脉冲: | 1000W (1kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | DO-216AA |
| 供应商设备包: | Powermite 1 (DO216-AA) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MXSMCJ130ARoving Networks / Microchip Technology |
TVS DIODE 130V 209V DO214AB |
|
P6KE110CAHR0GTSC (Taiwan Semiconductor) |
TVS DIODE 94V 152V DO204AC |
|
SMCJ7.0CA-HRWickmann / Littelfuse |
TVS DIODE 7V 12V DO214AB |
|
ESD5V5U5ULCE6327HTSA1IR (Infineon Technologies) |
TVS DIODE 5.5V 12V SC74 |
|
1.5KE62AHE3_A/DVishay General Semiconductor – Diodes Division |
TVS DIODE 53V 85V 1.5KE |
|
VTVS58ASMF-M3-18Vishay General Semiconductor – Diodes Division |
TVS DIODE 57.6V 98V DO219AB |
|
SMBJ70CE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 70V 125V DO214AA |
|
STS232120B301PowerStor (Eaton) |
TVS DIODE ESD SOT23 12V 30 PF |
|
MSMLJ64AE3Roving Networks / Microchip Technology |
TVS DIODE 64V 103V DO214AB |
|
1N6276AHE3_A/DVishay General Semiconductor – Diodes Division |
TVS DIODE 13.6V 22.5V 1.5KE |
|
CM1205-08CPSanyo Semiconductor/ON Semiconductor |
TVS DIODE 3.3V 8V 10WLCSP |
|
BZW04-48HR0GTSC (Taiwan Semiconductor) |
TVS DIODE 47.8V 77V DO204AL |
|
SMPC22A-M3/86AVishay General Semiconductor – Diodes Division |
TVS DIODE 22V 35.5V TO277A |
