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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 51V |
| 电压 - 击穿（分钟）: | 56.7V |
| 电压 - 钳位（最大值）@ ipp: | 82.4V |
| 电流 - 峰值脉冲 (10/1000µs): | 7.3A |
| 功率-峰值脉冲: | 600W |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | DO-214AA, SMB |
| 供应商设备包: | SMBJ (DO-214AA) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
GSOT12C-HE3-18Vishay General Semiconductor – Diodes Division |
TVS DIODE 12V 26V SOT23 |
|
MXRT100KP160AE3Roving Networks / Microchip Technology |
TVS DIODE 160V 315V CASE 5A |
|
5KP11A-E3/54Vishay General Semiconductor – Diodes Division |
TVS DIODE 11V 18.2V P600 |
|
TVP06B7V5A-GComchip Technology |
TVS DIODE 6.4V 11.3V SMB |
|
SMBJ15CAHE3_A/IVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AA |
|
MXSMBJ160CARoving Networks / Microchip Technology |
TVS DIODE 160V 259V DO214AA |
|
P6KE33A R0GTSC (Taiwan Semiconductor) |
TVS DIODE 28.2V 45.7V DO204AC |
|
SMAJ250CA-HJ.W. Miller / Bourns |
TVS DIODE 250V 405V SMA |
|
ESD0P4RFLE6327XTSA1IR (Infineon Technologies) |
TVS DIODE 50V 9V TSLP-4-7 |
|
1.5KE75A B0GTSC (Taiwan Semiconductor) |
TVS DIODE 64.1V 103V DO201 |
|
P4SMA47A M2GTSC (Taiwan Semiconductor) |
TVS DIODE 40.2V 64.8V DO214AC |
|
SMBJ200A-HJ.W. Miller / Bourns |
TVS DIODE 200V 324V SMB |
|
SA78CAHE3/73Vishay General Semiconductor – Diodes Division |
TVS DIODE 78V 126V DO204AC |
