English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 11V |
| 电压 - 击穿（分钟）: | 12.2V |
| 电压 - 钳位（最大值）@ ipp: | 18.2V |
| 电流 - 峰值脉冲 (10/1000µs): | - |
| 功率-峰值脉冲: | 5000W (5kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | R6, Axial |
| 供应商设备包: | R-6 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MXLSMCJ45CARoving Networks / Microchip Technology |
TVS DIODE 45V 72.7V DO214AB |
|
ESD203B102ELE6327XTMA1IR (Infineon Technologies) |
TVS DIODE 13.2V 23V TSLP-2-20 |
|
5KP6.0AEIC Semiconductor, Inc. |
TVS 5000W, CASE TYPE: D6 |
|
SMDJ17CMeritek |
TVS DIODE 17V 30.5V DO-214AB (SM |
|
1.5KE43A R0GTSC (Taiwan Semiconductor) |
TVS DIODE 36.8V 59.3V DO201 |
|
MXSMCJLCE13AE3Roving Networks / Microchip Technology |
TVS DIODE 13V 21.5V DO214AB |
|
30KPA64C-BWickmann / Littelfuse |
TVS DIODE 64V 109.2V P600 |
|
UPTB10E3/TR13Roving Networks / Microchip Technology |
TVS DIODE 10V 18V POWERMITE 1 |
|
A5KP20CA-GComchip Technology |
TVS DIODE 20V 32.4V R-6 |
|
MXSMBJSAC7.0Roving Networks / Microchip Technology |
TVS DIODE 7V 12.6V DO214AA |
|
SMDA24C-5E3/TR7Roving Networks / Microchip Technology |
TVS DIODE 24V 55V 8SO |
|
MPLAD30KP54CAE3Roving Networks / Microchip Technology |
TVS DIODE 54V 87.1V PLAD |
|
SMBJ17A-E3/52Vishay General Semiconductor – Diodes Division |
TVS DIODE 17V 27.6V DO214AA |
