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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 15.3V |
| 电压 - 击穿（分钟）: | 17.1V |
| 电压 - 钳位（最大值）@ ipp: | 25.2V |
| 电流 - 峰值脉冲 (10/1000µs): | 16A |
| 功率-峰值脉冲: | 400W |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | DO-204AL, DO-41, Axial |
| 供应商设备包: | DO-204AL (DO-41) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SMP12-M3/85AVishay General Semiconductor – Diodes Division |
TVS DIODE 12V 22V DO220AA |
|
P4KE20AWickmann / Littelfuse |
TVS DIODE 17.1V 27.7V DO204AL |
|
SM6S18AHE3_A/IVishay General Semiconductor – Diodes Division |
TVS DIODE 18V 29.2V DO218AB |
|
ATV06B121J-HFComchip Technology |
TVS DIODE 120V 193V DO214AA |
|
1.5SMC75CA-M3/57TVishay General Semiconductor – Diodes Division |
TVS DIODE 64.1V 104V DO214AB |
|
MASMBG26CARoving Networks / Microchip Technology |
TVS DIODE 26V 42.1V DO215AA |
|
MSMBJ75AE3Roving Networks / Microchip Technology |
TVS DIODE 75V 121V DO214AA |
|
CDNBS16-T24CJ.W. Miller / Bourns |
TVS DIODE 24V 57V 16SOIC |
|
15KP36CA-TPMicro Commercial Components (MCC) |
TVS DIODE 36V 59.7V R-6 |
|
P6SMB510AWickmann / Littelfuse |
TVS DIODE 434V 698V DO214AA |
|
MXSMBG14CAE3Roving Networks / Microchip Technology |
TVS DIODE 14V 23.2V DO215AA |
|
SMF30A-E3-18Vishay General Semiconductor – Diodes Division |
TVS DIODE 30V 48.4V DO219AB |
|
SMLJ22AE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 22V 35.5V DO214AB |
