类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101, TransZorb® |
包裹: | Tape & Box (TB) |
零件状态: | Active |
类型: | Zener |
单向通道: | - |
双向通道: | 1 |
电压 - 反向间隔(典型值): | 185V |
电压 - 击穿(分钟): | 209V |
电压 - 钳位(最大值)@ ipp: | 328V |
电流 - 峰值脉冲 (10/1000µs): | 1.2A |
功率-峰值脉冲: | 400W |
电源线保护: | No |
应用: | Automotive |
电容@频率: | - |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
包/箱: | DO-204AL, DO-41, Axial |
供应商设备包: | DO-204AL (DO-41) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MXLSMBJ12AE3Roving Networks / Microchip Technology |
TVS DIODE 12V 19.9V DO214AA |
|
P6SMB10A-E3/5BVishay General Semiconductor – Diodes Division |
TVS DIODE 8.55V 14.5V DO214AA |
|
MSMBJ90CARoving Networks / Microchip Technology |
TVS DIODE 90V 146V DO214AA |
|
SMBJ120D-M3/IVishay General Semiconductor – Diodes Division |
TVS DIODE 120V 190V DO214AA |
|
SMF45A-E3-18Vishay General Semiconductor – Diodes Division |
TVS DIODE 45V 72.7V DO219AB |
|
SMCG9.0AHE3/57TVishay General Semiconductor – Diodes Division |
TVS DIODE 9V 15.4V DO215AB |
|
MXLSMBG9.0CARoving Networks / Microchip Technology |
TVS DIODE 9V 15.4V DO215AA |
|
P4SMA75CA-E3/61Vishay General Semiconductor – Diodes Division |
TVS DIODE 64.1V 104V DO214AC |
|
SMCJ7.5CE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 7.5V 14.3V DO214AB |
|
SMCG16A-M3/9ATVishay General Semiconductor – Diodes Division |
TVS DIODE 16V 26V DO215AB |
|
SMAJ75AHE3_A/IVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AC |
|
MAP4KE170AE3Roving Networks / Microchip Technology |
TVS DIODE 145V 234V DO204AL |
|
SMBJ3V3-M3/52Vishay General Semiconductor – Diodes Division |
TVS DIODE 3.3V DO214AA |