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| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 11V |
| 电压 - 击穿（分钟）: | 12.2V |
| 电压 - 钳位（最大值）@ ipp: | 18.2V |
| 电流 - 峰值脉冲 (10/1000µs): | 822A |
| 功率-峰值脉冲: | 15000W (15kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | Nonstandard SMD |
| 供应商设备包: | PLAD |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SM8LC12E3/TR7Roving Networks / Microchip Technology |
TVS DIODE 12V 24V 8SO |
|
1SMC51A TR13 PBFREECentral Semiconductor |
TVS DIODE 51V 82.4V SMC |
|
P6SMB13CWickmann / Littelfuse |
TVS DIODE 11.1V 19.11V DO214AA |
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M5KP8.5AE3Roving Networks / Microchip Technology |
TVS DIODE 8.5V 14.4V DO204AR |
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MMBZ33VALT1GSanyo Semiconductor/ON Semiconductor |
TVS DIODE 26V 46V SOT23-3 |
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MSMBG58CARoving Networks / Microchip Technology |
TVS DIODE 58V 93.6V DO215AA |
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TMPG06-12AHE3_A/BVishay General Semiconductor – Diodes Division |
TVS DIODE 10.2V 16.7V MPG06 |
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SM15T12CASTMicroelectronics |
TVS DIODE 10.2V 21.7V SMC |
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5KP43A-E3/51Vishay General Semiconductor – Diodes Division |
TVS DIODE 43V 69.4V P600 |
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1.5KE550ATRSMC Diode Solutions |
TVS DIODE DO201AD |
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P4SMA16A-E3/5AVishay General Semiconductor – Diodes Division |
TVS DIODE 13.6V 22.5V DO214AC |
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SMCJ64A-E3/9ATVishay General Semiconductor – Diodes Division |
TVS DIODE 64V 103V DO214AB |
|
MXSMBG11ARoving Networks / Microchip Technology |
TVS DIODE 11V 18.2V DO215AA |
