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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 20V |
| 电压 - 击穿（分钟）: | 22.2V |
| 电压 - 钳位（最大值）@ ipp: | 32.4V |
| 电流 - 峰值脉冲 (10/1000µs): | 46A |
| 功率-峰值脉冲: | 1500W (1.5kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | 100pF @ 1MHz |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | DO-214AB, SMC |
| 供应商设备包: | DO-214AB (SMCJ) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
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TVS DIODE 17V 27.6V DO214AB |
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SMDJ170A-T7Wickmann / Littelfuse |
TVS DIODE 170V 275V DO214AB |
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SMCJ24A-HRAWickmann / Littelfuse |
TVS DIODE 24V 38.9V DO214AB |
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TVS DIODE 3.3V 9V 16SO |
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USB50803CE3/TR7Roving Networks / Microchip Technology |
TVS DIODE 3.3V 11V 8SO |
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P4KE160CAHE3/73Vishay General Semiconductor – Diodes Division |
TVS DIODE 136V 219V DO204AL |
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MSMBG64CARoving Networks / Microchip Technology |
TVS DIODE 64V 103V DO215AA |
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GSOT08-E3-18Vishay General Semiconductor – Diodes Division |
TVS DIODE 8V 19.2V SOT23 |
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MXSMCJ54AE3Roving Networks / Microchip Technology |
TVS DIODE 54V 87.1V DO214AB |
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SMBJ18A-QJ.W. Miller / Bourns |
TVS DIODE 18V 29.2V SMB |
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P4SMA200CAHE3_A/HVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AC |
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SMDA05C-4-2E3/TR7Roving Networks / Microchip Technology |
TVS DIODE 5V 11V 8SO |
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SMBJ10CAE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 10V 17V DO214AA |
