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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 100V |
| 电压 - 击穿（分钟）: | 111V |
| 电压 - 钳位（最大值）@ ipp: | 162V |
| 电流 - 峰值脉冲 (10/1000µs): | 31A |
| 功率-峰值脉冲: | 5000W (5kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | DO-204AR, Axial |
| 供应商设备包: | DO-204AR |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SMAJ26A-HFComchip Technology |
DIODE TVS 26V 400W SMA UNI-DIR |
|
SMAJ10A R3GTSC (Taiwan Semiconductor) |
TVS DIODE 10V 17V DO214AC |
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10BJ180APowerStor (Eaton) |
TVS DIODE 180V 292VC 1KW DO214AA |
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SA150CA A0GTSC (Taiwan Semiconductor) |
TVS DIODE 150V 243V DO204AC |
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SM6T100CAHE3/5BVishay General Semiconductor – Diodes Division |
TVS DIODE 85.5V 137V DO214AA |
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GSOT03-HE3-18Vishay General Semiconductor – Diodes Division |
TVS DIODE 3.3V 12.3V SOT23 |
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TVS DIODE 58V 93.6V DO215AB |
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TVS SMA 12V 400W UNI |
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TVS DIODE 185V 328V DO41 |
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TV02W300-GComchip Technology |
TVS DIODE 30V 48.4V SOD123 |
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P4SMA510A-M3/61Vishay General Semiconductor – Diodes Division |
TVS DIODE 434V 698V DO214AC |
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MXLRT100KP85CAE3Roving Networks / Microchip Technology |
TVS DIODE 85V 166V CASE 5A |
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MX5KP43CAE3Roving Networks / Microchip Technology |
TVS DIODE 43V 69.4V CASE 5A |
