English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 8V |
| 电压 - 击穿（分钟）: | 9V |
| 电压 - 钳位（最大值）@ ipp: | 13.7V |
| 电流 - 峰值脉冲 (10/1000µs): | 10.9A |
| 功率-峰值脉冲: | 1000W (1kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | DO-216AA |
| 供应商设备包: | Powermite 1 (DO216-AA) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MSMBJ8.0ARoving Networks / Microchip Technology |
TVS DIODE 8V 13.6V DO214AA |
|
SMLJ26A-QJ.W. Miller / Bourns |
TVS DIODE 26V 42.1V SMC |
|
SMC5K60A-M3/HVishay General Semiconductor – Diodes Division |
TVS DIODE 60V 96.8V DO214AB |
|
SMA6J26A-TRSTMicroelectronics |
TVS DIODE 26V 47.9V SMA |
|
MSMBJ54CAE3Roving Networks / Microchip Technology |
TVS DIODE 54V 87.1V DO214AA |
|
5KP30AHE3/54Vishay General Semiconductor – Diodes Division |
TVS DIODE 30V 48.4V P600 |
|
TV15C100JB-HFComchip Technology |
TVS DIODE 10V 17V DO214AB |
|
P6SMB100CWickmann / Littelfuse |
TVS DIODE 85.5V 143.85V DO214AA |
|
MX5KP12CAE3Roving Networks / Microchip Technology |
TVS DIODE 12V 19.9V CASE 5A |
|
5.0SMDJ54AWickmann / Littelfuse |
TVS DIODE 54V 87.1V DO214AB |
|
SMBG16A-E3/52Vishay General Semiconductor – Diodes Division |
TVS DIODE 16V 26V DO215AA |
|
1N6267A-E3/54Vishay General Semiconductor – Diodes Division |
TVS DIODE 5.8V 10.5V 1.5KE |
|
D8V0H1B2LP-7BZetex Semiconductors (Diodes Inc.) |
TRANSIENT VOLTAGE SUPPRESSOR PP |
