English
简体中文
CAP CER 1000PF 250V C0G/NP0 1812
TVS DIODE 26V 42.1V DO214AB
SMA-RP/BNC-SP G316D 36I
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, PAR® |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 26V |
| 电压 - 击穿（分钟）: | 28.9V |
| 电压 - 钳位（最大值）@ ipp: | 42.1V |
| 电流 - 峰值脉冲 (10/1000µs): | 71.3A |
| 功率-峰值脉冲: | 3000W (3kW) |
| 电源线保护: | No |
| 应用: | Automotive |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 185°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | DO-214AB, SMC |
| 供应商设备包: | DO-214AB (SMC) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
5.0SMDJ64A M6GTSC (Taiwan Semiconductor) |
TVS DIODE 64V 103V DO214AB |
|
CPDFR12VComchip Technology |
TVS DIODE 12V 25V 1005/SOD323F |
|
MSMBG60ARoving Networks / Microchip Technology |
TVS DIODE 60V 96.8V DO215AA |
|
MXLSMLJ13CARoving Networks / Microchip Technology |
TVS DIODE 13V 21.5V DO214AB |
|
P4KE51CA-GComchip Technology |
TVS DIODE 43.6V 70.1V DO41 |
|
SMLJ22E3/TR13Roving Networks / Microchip Technology |
TVS DIODE 22V 39.4V DO214AB |
|
SMCJ36AHE3/9ATVishay General Semiconductor – Diodes Division |
TVS DIODE 36V 58.1V DO214AB |
|
SZ1SMB14CAT3GWickmann / Littelfuse |
TVS DIODE 14V 23.2V SMB |
|
BZW06-48B R0GTSC (Taiwan Semiconductor) |
TVS DIODE 47.8V 100V DO204AC |
|
1KSMB16A M4GTSC (Taiwan Semiconductor) |
TVS DIODE 13.6V 22.5V DO214AA |
|
SMBG170A-M3/52Vishay General Semiconductor – Diodes Division |
TVS DIODE 170V 275V DO215AA |
|
MA5KP17AE3Roving Networks / Microchip Technology |
TVS DIODE 17V 27.6V DO204AR |
|
A5KP13A-GComchip Technology |
TVS DIODE 13V 21.5V R-6 |