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| 类型 | 描述 |
|---|---|
| 系列: | SMDJ-HRA |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 24V |
| 电压 - 击穿（分钟）: | 26.7V |
| 电压 - 钳位（最大值）@ ipp: | 38.9V |
| 电流 - 峰值脉冲 (10/1000µs): | 77.1A |
| 功率-峰值脉冲: | 3000W (3kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | DO-214AB, SMC |
| 供应商设备包: | DO-214AB (SMCJ) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MXLSMCJ18CARoving Networks / Microchip Technology |
TVS DIODE 18V 29.2V DO214AB |
|
MXSMCJLCE11AE3Roving Networks / Microchip Technology |
TVS DIODE 11V 18.2V DO214AB |
|
P4KE180CAHE3/73Vishay General Semiconductor – Diodes Division |
TVS DIODE 154V 246V DO204AL |
|
TVP06B501CA-GComchip Technology |
TVS DIODE 427.5V 690V SMB |
|
CDNBS08-T36CJ.W. Miller / Bourns |
TVS DIODE 36V 76.8V 8SOIC |
|
SMB10J11AHM4GTSC (Taiwan Semiconductor) |
TVS DIODE 11V 18.2V DO214AA |
|
5.0SMDJ30AHM6GTSC (Taiwan Semiconductor) |
TVS DIODE 30V 48.4V DO214AB |
|
SMCJE58APowerStor (Eaton) |
TVS DIODE 58V 93.6VC 1500W SMC |
|
DA108S1STMicroelectronics |
TVS DIODE 15V 8SOIC |
|
SMBJ7.5ATRSMC Diode Solutions |
TVS DIODE 7.5V 12.9V SMB |
|
SMBJ54CD-M3/IVishay General Semiconductor – Diodes Division |
TVS DIODE 54V 85.9V DO214AA |
|
P6SMB20CA-QJ.W. Miller / Bourns |
TVS DIODE |
|
SMB8J33CA-M3/52Vishay General Semiconductor – Diodes Division |
TVS DIODE 33V 53.3V DO214AA |
