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| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | - |
| 单向通道: | - |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | - |
| 电压 - 击穿（分钟）: | - |
| 电压 - 钳位（最大值）@ ipp: | - |
| 电流 - 峰值脉冲 (10/1000µs): | - |
| 功率-峰值脉冲: | - |
| 电源线保护: | - |
| 应用: | - |
| 电容@频率: | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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1N6277AHE3_A/DVishay General Semiconductor – Diodes Division |
TVS DIODE 15.3V 25.2V 1.5KE |
|
MXL5KP22CARoving Networks / Microchip Technology |
TVS DIODE 22V 35.5V CASE 5A |
|
TV04A150J-HFComchip Technology |
TVS DIODE 15V 24.4V SMA |
|
1.5KE43CAHE3_A/CVishay General Semiconductor – Diodes Division |
TVS DIODE 36.8V 59.3V 1.5KE |
|
SMLJ14CA-QHJ.W. Miller / Bourns |
TVS DIODE 14V 23.2V SMC |
|
NSPM2052MUT5GSanyo Semiconductor/ON Semiconductor |
HIGH SURGE ESD PROTECTION |
|
MASMCJLCE17ARoving Networks / Microchip Technology |
TVS DIODE 17V 27.6V DO214AB |
|
3KASMC10AHM3_B/HVishay General Semiconductor – Diodes Division |
TVS DIODE 10V 17V DO214AB |
|
MXSMBJ20ARoving Networks / Microchip Technology |
TVS DIODE 20V 32.4V DO214AA |
|
SMBJ7.5A-M3/5BVishay General Semiconductor – Diodes Division |
TVS DIODE 7.5V 12.9V DO214AA |
|
SMAJ150CA-M3/61Vishay General Semiconductor – Diodes Division |
TVS DIODE 150V 243V DO214AC |
|
5KP36A-GComchip Technology |
TVS DIODE 36V 58.1V R-6 |
|
SM8LC05/TR7Roving Networks / Microchip Technology |
TVS DIODE 5V 11V 8SO |
