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| 类型 | 描述 |
|---|---|
| 系列: | TransZorb® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 14V |
| 电压 - 击穿（分钟）: | 15.6V |
| 电压 - 钳位（最大值）@ ipp: | 23.2V |
| 电流 - 峰值脉冲 (10/1000µs): | 216A |
| 功率-峰值脉冲: | 5000W (5kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | P600, Axial |
| 供应商设备包: | P600 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
DF2S6M4SL,L3FToshiba Electronic Devices and Storage Corporation |
TVS DIODE 5.5V 15V SL2 |
|
MSMBJSAC45Roving Networks / Microchip Technology |
TVS DIODE 45V 77V DO214AA |
|
SMBJ5.0CA/54Vishay General Semiconductor – Diodes Division |
TVS DIODE 5V 9.2V DO214AA |
|
1.5KE47A-E3/73Vishay General Semiconductor – Diodes Division |
TVS DIODE 40.2V 64.8V 1.5KE |
|
VTVS11GSMF-M3-08Vishay General Semiconductor – Diodes Division |
TVS DIODE 11.2V 18V DO219AB |
|
SMBJ90CAE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 90V 146V DO214AA |
|
SMBJ18A M4GTSC (Taiwan Semiconductor) |
TVS DIODE 18V 29.2V DO214AA |
|
3KASMC30AHM3_B/HVishay General Semiconductor – Diodes Division |
TVS DIODE 30V 48.4V DO214AB |
|
MASMCJ58ARoving Networks / Microchip Technology |
TVS DIODE 58V 93.6V DO214AB |
|
1KSMB39AHR5GTSC (Taiwan Semiconductor) |
TVS DIODE 33.3V 53.9V DO214AA |
|
ESDLC3V3LB-TPMicro Commercial Components (MCC) |
TVS DIODE 3.3V 11V DFN1006-2 |
|
TPSMB24AHE3_A/HVishay General Semiconductor – Diodes Division |
TVS DIODE 20.5V 33.2V DO214AA |
|
SMA6F8.5AYSTMicroelectronics |
AUTOMOTIVE POWER-RAIL TVS PROTEC |
