类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101, SLD5S |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
类型: | Zener |
单向通道: | 1 |
双向通道: | - |
电压 - 反向间隔(典型值): | 17V |
电压 - 击穿(分钟): | 18.9V |
电压 - 钳位(最大值)@ ipp: | 27.6V |
电流 - 峰值脉冲 (10/1000µs): | 130A |
功率-峰值脉冲: | 3600W (3.6kW) |
电源线保护: | No |
应用: | Automotive |
电容@频率: | - |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | Nonstandard SMD |
供应商设备包: | SMTO-263 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SMBG130AHE3/5BVishay General Semiconductor – Diodes Division |
TVS DIODE 130V 209V DO215AA |
|
SMCJ48A-QHJ.W. Miller / Bourns |
TVS DIODE 48V 77.4V SMC |
|
SMLJ150AJ.W. Miller / Bourns |
TVS DIODE 150V 243V SMC |
|
P4SMAJ14CADiotec Semiconductor |
TVS SMA 14V 400W BI |
|
MA5KP22ARoving Networks / Microchip Technology |
TVS DIODE 22V 35.5V DO204AR |
|
5KP8.5CA-BWickmann / Littelfuse |
TVS DIODE 8.5V 14.4V P600 |
|
VTVS10GSMF-M3-08Vishay General Semiconductor – Diodes Division |
TVS DIODE 10.3V 16.3V DO219AB |
|
1KSMB12CAHR5GTSC (Taiwan Semiconductor) |
TVS DIODE 10.2V 16.7V DO214AA |
|
MXLSMBJ6.5CAE3Roving Networks / Microchip Technology |
TVS DIODE 6.5V 11.2V DO214AA |
|
MXLSMLJ18AE3Roving Networks / Microchip Technology |
TVS DIODE 18V 29.2V DO214AB |
|
DF2B12M1CT(TPL3)Toshiba Electronic Devices and Storage Corporation |
TVS DIODE 8V 18V CST2 |
|
1.5KE440ABULKEIC Semiconductor, Inc. |
TVS 1500W, CASE TYPE: DO-201 |
|
TPSMD43AWickmann / Littelfuse |
TVS DIODE 43V 69.4V DO214AB |