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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 11V |
| 电压 - 击穿（分钟）: | 12.2V |
| 电压 - 钳位（最大值）@ ipp: | 18.2V |
| 电流 - 峰值脉冲 (10/1000µs): | 33A |
| 功率-峰值脉冲: | 600W |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | DO-215AA, SMB Gull Wing |
| 供应商设备包: | SMBG (DO-215AA) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SA22CAHE3/73Vishay General Semiconductor – Diodes Division |
TVS DIODE 22V 35.5V DO204AC |
|
MASMCJ110CAE3Roving Networks / Microchip Technology |
TVS DIODE 110V 177V DO214AB |
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JANTXV1N6115USRoving Networks / Microchip Technology |
TVS DIODE 18.2V 34.97V B SQ-MELF |
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1.5KE62A-E3/73Vishay General Semiconductor – Diodes Division |
TVS DIODE 53V 85V 1.5KE |
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TVS DIODE 28V 45.4V P600 |
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SMB10J33A-M3/52Vishay General Semiconductor – Diodes Division |
TVS DIODE 33V 53.3V DO214AA |
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DIODE TVS 110V 600W SMB UNI-DIR |
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SM6S12ATHE3/IVishay General Semiconductor – Diodes Division |
TVS DIODE 12V 19.9V DO218AC |
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P4KE220A R0GTSC (Taiwan Semiconductor) |
TVS DIODE 185V 328V DO204AL |
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SA7.5CA B0GTSC (Taiwan Semiconductor) |
TVS DIODE 7.5V 12.9V DO204AC |
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TVS DIODE 100V 162VC 400W SMA |
|
1.5SMC30A-E3/57TVishay General Semiconductor – Diodes Division |
TVS DIODE 25.6V 41.4V DO214AB |
