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| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | - |
| 电压 - 击穿（分钟）: | - |
| 电压 - 钳位（最大值）@ ipp: | - |
| 电流 - 峰值脉冲 (10/1000µs): | - |
| 功率-峰值脉冲: | 600W |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | DO-214AA, SMB |
| 供应商设备包: | DO-214AA (SMB) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
P4KE350CA R0GTSC (Taiwan Semiconductor) |
TVS DIODE 300V 482V DO204AL |
|
MSMCG7.0CARoving Networks / Microchip Technology |
TVS DIODE 7V 12V DO215AB |
|
P4SMA110AHE3_A/HVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AC |
|
SMF54A-HE3-18Vishay General Semiconductor – Diodes Division |
TVS DIODE 54V 88V DO219AB |
|
P4KE33CA-GComchip Technology |
TVS DIODE 28.2V 45.7V DO41 |
|
PESD15VS2UT/DG/B3215Rochester Electronics |
TVS DIODE |
|
MASMBG75AE3Roving Networks / Microchip Technology |
TVS DIODE 75V 121V DO215AA |
|
3KASMC18AHE3_B/HVishay General Semiconductor – Diodes Division |
TVS DIODE 18V 29.2V DO214AB |
|
MXSMBG18ARoving Networks / Microchip Technology |
TVS DIODE 18V 29.2V DO215AA |
|
TGL41-160A-E3/96Vishay General Semiconductor – Diodes Division |
TVS DIODE 136V 219V DO213AB |
|
SMDJE18CAPowerStor (Eaton) |
TVS DIODE 18V 29.2VC 3000W SMD |
|
DF2S6.8ASL,L3FToshiba Electronic Devices and Storage Corporation |
TVS DIODE 5VWM SL2-2 |
|
MP4KE130ARoving Networks / Microchip Technology |
TVS DIODE 111V 179V DO204AL |
