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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 40V |
| 电压 - 击穿（分钟）: | 44.4V |
| 电压 - 钳位（最大值）@ ipp: | 64.5V |
| 电流 - 峰值脉冲 (10/1000µs): | 9.3A |
| 功率-峰值脉冲: | 600W |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | DO-214AA, SMB |
| 供应商设备包: | SMBJ (DO-214AA) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
P4SMA13CA-M3/5AVishay General Semiconductor – Diodes Division |
TVS DIODE 11.1V 18.2V DO214AC |
|
SMAJ18CA-HFComchip Technology |
DIODE TVS 18V 400W SMA BI-DIR |
|
SMBJ78A M4GTSC (Taiwan Semiconductor) |
TVS DIODE 78V 126V DO214AA |
|
MXL5KP58AE3Roving Networks / Microchip Technology |
TVS DIODE 58V 93.6V CASE 5A |
|
MASMBG20CARoving Networks / Microchip Technology |
TVS DIODE 20V 32.4V DO215AA |
|
SMA6J75A-QJ.W. Miller / Bourns |
TVS DIODE SMA AECQ |
|
MSMLG18CARoving Networks / Microchip Technology |
TVS DIODE 18V 29.2V DO215AB |
|
SMDJE22APowerStor (Eaton) |
TVS DIODE 22V 35.5VC 3000W SMD |
|
UPTB28E3/TR7Roving Networks / Microchip Technology |
TVS DIODE 28V 47.8V POWERMITE 1 |
|
MXLSMCJ28CAE3Roving Networks / Microchip Technology |
TVS DIODE 28V 45.4V DO214AB |
|
MSMP8.0A-M3/89AVishay General Semiconductor – Diodes Division |
TVS DIODE 8V 13.6V MICROSMP |
|
SMAJ30CHR3GTSC (Taiwan Semiconductor) |
400W 37V 10% BIDIRECTIONAL TVS |
|
1.5SMC20CA-QJ.W. Miller / Bourns |
TVS DIODE |
