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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 64V |
| 电压 - 击穿（分钟）: | 71.1V |
| 电压 - 钳位（最大值）@ ipp: | 103V |
| 电流 - 峰值脉冲 (10/1000µs): | 14.6A |
| 功率-峰值脉冲: | 1500W (1.5kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | DO-214AB, SMC |
| 供应商设备包: | DO-214AB (SMCJ) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SMAJ8.5CA-M3/5AVishay General Semiconductor – Diodes Division |
TVS DIODE 8.5V 14.4V DO214AC |
|
1.5SMC18CA-M3/9ATVishay General Semiconductor – Diodes Division |
TVS DIODE 15.3V 25.2V DO214AB |
|
JANTX1N6169ARoving Networks / Microchip Technology |
TVS DIODE 98.8V 178.8V C AXIAL |
|
MSMCJ85AE3Roving Networks / Microchip Technology |
TVS DIODE 85V 137V DO214AB |
|
MXSMCJLCE12AE3Roving Networks / Microchip Technology |
TVS DIODE 12V 19.9V DO214AB |
|
TPC10AHM3_A/HVishay General Semiconductor – Diodes Division |
TVS DIODE 8.55V 14.5V TO277A |
|
SMAJ36A R3GTSC (Taiwan Semiconductor) |
TVS DIODE 36V 58.1V DO214AC |
|
VTVS58ASMF-M3-08Vishay General Semiconductor – Diodes Division |
TVS DIODE 57.6V 98V DO219AB |
|
CUZ6V2,H3FToshiba Electronic Devices and Storage Corporation |
ZENER DIODE OVP VZ:6.2V PD:0.2W |
|
P6KE30A-BWickmann / Littelfuse |
TVS DIODE 25.6V 41.4V DO204AC |
|
P6SMB30CA TR13 PBFREECentral Semiconductor |
TVS DIODE 25.6V 41.4V SMB |
|
1N6109AUSSemtech |
TVS DIODE 9.9V 18.2V |
|
SMCJ19AMeritek |
TVS DIODE 19V 30.8V DO-214AB (SM |
