TVS DIODE 26V 42.1V P600
FERRITE BEAD
类型 | 描述 |
---|---|
系列: | 5KP-HRA |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
类型: | Zener |
单向通道: | 1 |
双向通道: | - |
电压 - 反向间隔(典型值): | 26V |
电压 - 击穿(分钟): | 28.9V |
电压 - 钳位(最大值)@ ipp: | 42.1V |
电流 - 峰值脉冲 (10/1000µs): | 121.1A |
功率-峰值脉冲: | 5000W (5kW) |
电源线保护: | No |
应用: | General Purpose |
电容@频率: | - |
工作温度: | -55°C ~ 175°C (TA) |
安装类型: | Through Hole |
包/箱: | P600, Axial |
供应商设备包: | P600 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MXLP4KE22CAE3Roving Networks / Microchip Technology |
TVS DIODE 18.8V 30.6V DO204AL |
|
SMAJ90Meritek |
TVS DIODE 90V 160V DO-214AC (SMA |
|
MX15KP170AE3Roving Networks / Microchip Technology |
TVS DIODE 170V 275V CASE 5A |
|
P4KE220AHR0GTSC (Taiwan Semiconductor) |
TVS DIODE 185V 328V DO204AL |
|
SMBG16A-M3/5BVishay General Semiconductor – Diodes Division |
TVS DIODE 16V 26V DO215AA |
|
MSMBJSAC75Roving Networks / Microchip Technology |
TVS DIODE 75V 121V DO214AA |
|
P4KE130CAHR1GTSC (Taiwan Semiconductor) |
TVS DIODE 111V 179V DO204AL |
|
MXLSMLJ58AE3Roving Networks / Microchip Technology |
TVS DIODE 58V 93.6V DO214AB |
|
P4SMAJ160CDiotec Semiconductor |
TVS SMA 160V 400W BI |
|
TGL41-30CDiotec Semiconductor |
TVS MELF 24.3V 400W BI |
|
CEZ6V8,L3FToshiba Electronic Devices and Storage Corporation |
ZENER DIODE OVP VZ:6.8V PD:0.15W |
|
SMCG54CAHE3/9ATVishay General Semiconductor – Diodes Division |
TVS DIODE 54V 87.1V DO215AB |
|
MAP4KE16CARoving Networks / Microchip Technology |
TVS DIODE 13.6V 22.5V DO204AL |