类型 | 描述 |
---|---|
系列: | Military, MIL-PRF-19500 |
包裹: | Bulk |
零件状态: | Active |
类型: | Zener |
单向通道: | - |
双向通道: | 1 |
电压 - 反向间隔(典型值): | 100V |
电压 - 击穿(分钟): | 111V |
电压 - 钳位(最大值)@ ipp: | 197V |
电流 - 峰值脉冲 (10/1000µs): | - |
功率-峰值脉冲: | 100000W (100kW) |
电源线保护: | No |
应用: | General Purpose |
电容@频率: | - |
工作温度: | -65°C ~ 150°C (TJ) |
安装类型: | Through Hole |
包/箱: | DO-204AR, Axial |
供应商设备包: | Case 5A (DO-204AR) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
DF2B29FU,H3FToshiba Electronic Devices and Storage Corporation |
TVS DIODE 24V 47V USC |
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1N6278AHE3_A/DVishay General Semiconductor – Diodes Division |
TVS DIODE 17.1V 27.7V 1.5KE |
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SA75AHE3/73Vishay General Semiconductor – Diodes Division |
TVS DIODE 75V 121V DO204AC |
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SA85A-E3/73Vishay General Semiconductor – Diodes Division |
TVS DIODE 85V 137V DO204AC |
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PESD3V3T1BLYLNexperia |
TVS DIODE 3.3V 11V DFN1006-2 |
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SMBJ60CA-M3/5BVishay General Semiconductor – Diodes Division |
TVS DIODE 60V 96.8V DO214AA |
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SMBJ6.0AHE3_A/IVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AA |
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MXLSMBJ78CAE3Roving Networks / Microchip Technology |
TVS DIODE 78V 126V DO214AA |
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MMBZ20VALT1GSanyo Semiconductor/ON Semiconductor |
TVS DIODE 17V 28V SOT23-3 |
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SMDA15C-4-2/TR13Roving Networks / Microchip Technology |
TVS DIODE 15V 30V 8SOIC |
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PESD1CAN,215Nexperia |
TVS DIODE 24V 70V SOT23 |
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SMBJ18CA-TPMicro Commercial Components (MCC) |
TVS DIODE 18V 29.2V DO214AA |
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SMCJ8.0A-HRAWickmann / Littelfuse |
TVS DIODE 8V 13.6V DO214AB |