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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 17V |
| 电压 - 击穿（分钟）: | 18.9V |
| 电压 - 钳位（最大值）@ ipp: | 27.6V |
| 电流 - 峰值脉冲 (10/1000µs): | 106.6A |
| 功率-峰值脉冲: | 3000W (3kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | DO-214AB, SMC |
| 供应商设备包: | DO-214AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MASMBJ33CAE3Roving Networks / Microchip Technology |
TVS DIODE 33V 53.3V DO214AA |
|
SMAJ130CAE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 130V 209V DO214AC |
|
P6KE22A-E3/54Vishay General Semiconductor – Diodes Division |
TVS DIODE 18.8V 30.6V DO204AC |
|
P6SMB16CA-M3/5BVishay General Semiconductor – Diodes Division |
TVS DIODE 13.6V 22.5V DO214AA |
|
BZT03C91-TRVishay General Semiconductor – Diodes Division |
TVS DIODE 75V 126V SOD57 |
|
MASMLJ7.0CAE3Roving Networks / Microchip Technology |
TVS DIODE 7V 12V DO214AB |
|
MASMBG11ARoving Networks / Microchip Technology |
TVS DIODE 11V 18.2V DO215AA |
|
SA33CA B0GTSC (Taiwan Semiconductor) |
TVS DIODE 33V 71.4V DO204AC |
|
SA28CAHR0GTSC (Taiwan Semiconductor) |
TVS DIODE 28V 59V DO204AC |
|
SMBG48CAHE3/5BVishay General Semiconductor – Diodes Division |
TVS DIODE 48V 77.4V DO215AA |
|
15KPA48CATRSMC Diode Solutions |
TVS DIODE 48V 77.7V P600 |
|
MASMLJ26CAE3Roving Networks / Microchip Technology |
TVS DIODE 26V 42.1V DO214AB |
|
MMBZ10VALT116ROHM Semiconductor |
TVS DIODE 6.5V 14.2V SOT23 |
