类型 | 描述 |
---|---|
系列: | SMCJ |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
类型: | Zener |
单向通道: | - |
双向通道: | 1 |
电压 - 反向间隔(典型值): | 51V |
电压 - 击穿(分钟): | 56.7V |
电压 - 钳位(最大值)@ ipp: | 82.4V |
电流 - 峰值脉冲 (10/1000µs): | 19A |
功率-峰值脉冲: | 1500W (1.5kW) |
电源线保护: | No |
应用: | General Purpose |
电容@频率: | - |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | DO-214AB, SMC |
供应商设备包: | DO-214AB (SMC) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MSMCJ160CAE3Roving Networks / Microchip Technology |
TVS DIODE 160V 259V DO214AB |
|
P4KE33CAHE3/73Vishay General Semiconductor – Diodes Division |
TVS DIODE 28.2V 45.7V DO204AL |
|
P4SMAJ170CADiotec Semiconductor |
TVS SMA 170V 400W BI |
|
10BJ48APowerStor (Eaton) |
TVS DIODE 48V 77.4VC 1KW DO214AA |
|
MA15KP26AE3Roving Networks / Microchip Technology |
TVS DIODE 26V 44V DO204AR |
|
SMAJ170AHR3GTSC (Taiwan Semiconductor) |
TVS DIODE 170V 275V DO214AC |
|
VTVS63ASMF-HM3-08Vishay General Semiconductor – Diodes Division |
TVS DIODE 63V 108V DO219AB |
|
P6SMB200CAHE3_A/IVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AA |
|
MASMCJ18AE3Roving Networks / Microchip Technology |
TVS DIODE 18V 29.2V DO214AB |
|
MSMBJ9.0ARoving Networks / Microchip Technology |
TVS DIODE 9V 15.4V DO214AA |
|
SMCJ51CA-M3/9ATVishay General Semiconductor – Diodes Division |
TVS DIODE 51V 82.4V DO214AB |
|
1.5SMC91CA V7GTSC (Taiwan Semiconductor) |
TVS DIODE 77.8V 125V DO214AB |
|
MXLP4KE8.2AE3Roving Networks / Microchip Technology |
TVS DIODE 7.02V 12.1V DO204AL |